Carrier Drift Velocity and Edge Magnetoplasmons in Graphene
نویسندگان
چکیده
منابع مشابه
Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy
Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semicondu...
متن کاملMagnetoplasmons in quasineutral epitaxial graphene nanoribbons.
We present an infrared transmission spectroscopy study of the inter-Landau-level excitations in quasineutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the L(0(-1)) → L(1(0)) transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of an upper-hybrid mode between the...
متن کاملIntrinsic terahertz plasmons and magnetoplasmons in large scale monolayer graphene.
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magne...
متن کاملFaraday rotation due to excitation of magnetoplasmons in graphene microribbons.
A single graphene sheet, when subjected to a perpendicular static magnetic field, provides a Faraday rotation that, per atomic layer, greatly surpasses that of any other known material. In continuous graphene, Faraday rotation originates from the cyclotron resonance of massless carriers, which allows dynamical tuning through either external electrostatic or magneto-static setting. Furthermore, ...
متن کاملLimitation and Diameter Effects on Carrier Drift Velocity in Carbon Nanotubes
Due to the chemical stability and perfection of Carbon Nanotubes (CNTs) structure, carrier mobility is not affected by processing and roughness scattering as it is in the conventional semiconductor channel. Therefore, CNTs are being considered as viable candidates for high-speed applications. The mobility and saturation velocity are the two important parameters that control the charge transport...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2013
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.110.016801